MindMap Gallery Analog electronic circuit knowledge framework
Analog electronic circuit knowledge framework, including: semiconductor, PN junction (P-N) junction, diode application (Diode Application), resistance levels (Resistance levels).
Edited at 2023-01-08 20:11:01One Hundred Years of Solitude is the masterpiece of Gabriel Garcia Marquez. Reading this book begins with making sense of the characters' relationships, which are centered on the Buendía family and tells the story of the family's prosperity and decline, internal relationships and political struggles, self-mixing and rebirth over the course of a hundred years.
One Hundred Years of Solitude is the masterpiece of Gabriel Garcia Marquez. Reading this book begins with making sense of the characters' relationships, which are centered on the Buendía family and tells the story of the family's prosperity and decline, internal relationships and political struggles, self-mixing and rebirth over the course of a hundred years.
Project management is the process of applying specialized knowledge, skills, tools, and methods to project activities so that the project can achieve or exceed the set needs and expectations within the constraints of limited resources. This diagram provides a comprehensive overview of the 8 components of the project management process and can be used as a generic template for direct application.
One Hundred Years of Solitude is the masterpiece of Gabriel Garcia Marquez. Reading this book begins with making sense of the characters' relationships, which are centered on the Buendía family and tells the story of the family's prosperity and decline, internal relationships and political struggles, self-mixing and rebirth over the course of a hundred years.
One Hundred Years of Solitude is the masterpiece of Gabriel Garcia Marquez. Reading this book begins with making sense of the characters' relationships, which are centered on the Buendía family and tells the story of the family's prosperity and decline, internal relationships and political struggles, self-mixing and rebirth over the course of a hundred years.
Project management is the process of applying specialized knowledge, skills, tools, and methods to project activities so that the project can achieve or exceed the set needs and expectations within the constraints of limited resources. This diagram provides a comprehensive overview of the 8 components of the project management process and can be used as a generic template for direct application.
Semiconductor diode
semiconductor
Semiconductor material
Ge
Si
GaAs
Semiconductors are electrically neutral to the outside world
Intrinsic semiconductor
Definition: A pure semiconductor that is completely free of impurities and crystal defects
Features
Electron concentration = Hole concentration
Poor electrical conductivity
Low carrier concentration
As the temperature increases, the number of carriers increases
Intrinsic excitation: When the temperature of the semiconductor is T>0K, electrons break away from the covalent bond to form free electrons.
intrinsic carriers
Hole: A vacancy formed when an electron breaks away from a covalent bond and becomes a free electron
Free electrons: Valence electrons break covalent bonds and form freely moving electrons
impurity semiconductor
N-type semiconductor (N-Type)
Introducing 5-valent elements (Donor ions)
phosphorus
antimony
arsenic
Features
electrically neutral
High conductivity
The extra fifth electron is not associated with any specific covalent bond
P-type semiconductor (P-Type)
Introducing 3-valent elements (Acceptor ions)
boron
gallium
indium
Features
electrically neutral
Not enough electrons to form covalent bonds, creating holes
PN junction(P-N) junction
Formation: The N-type impurity region is in close contact with a P-type impurity region, and a depletion region is generated at the junction.
Carrier diffusion movement: concentration difference
Many carriers (holes) in the P-type region diffuse to the N-type region
Diffusion of electrons (electrons) from the N-type region to the P-type region
drift motion
The trapped charged ions (P-type negative ions, N-type positive ions) form a self-constructed electric field, driving the minority carriers to move toward low potential.
Features
The direction of the internal electric field of the PN junction is from the N region to the P region.
Has one-way conductivity
The external voltage causes the current to flow from N to P, with high resistance and small current.
The external voltage causes the current to flow from P to N, with low resistance and large current.
Forward bias: The P terminal is connected to positive, the N terminal is connected to negative, the depletion layer becomes narrower, aggravates the diffusion movement, prevents drift movement, and the PN junction is turned on
Reverse bias: The N terminal is connected to the positive electrode, the P terminal is connected to the negative electrode, the internal electric field is strengthened, the depletion layer becomes wider, the drift current comes from the minority carrier, the current is very small, and the PN junction is cut off
Shockley's equation:
is the reverse saturation current
is the forward bias voltage applied to the diode
is the ideal factor, usually 1
Thermal voltage:
Boltzmann's constant k
charge q
reverse breakdown
Electrical breakdown (reversible)
Zener breakdown
avalanche breakdown
Thermal breakdown (irreversible)
Diode Application
Diode equivalent circuit
ideal equivalent circuit
Current flows from the positive pole of the diode to the negative pole, and the circuit is turned on
Current flows from the negative pole of the diode to the positive pole, and the circuit is disconnected
Simplified/approximate equivalent circuit
The diode voltage cannot be ignored. The voltage of silicon diodes is generally 0.7V.
Piecewise linear equivalent circuit
Equivalent model
Ideal diode, ignore diode voltage
Simplified diode
half wave rectification
AC input, DC output
full wave rectification
limiting circuit
Resistance levels
AC resistance
Resistor type
DC or static resistance
DC resistance
AC or dynamic resistance
AC resistance depends on the DC operating point Q-Point in the diode
Average AC resistance
Line definition within range
Software used: Mindmaster
Bipolar Junction Transistors
triode
Transistor type
NPN
PNP
structure
Collector C
Emitter E
relation:
Base B
NPN
internal conditions
The emission region is highly doped
Thin base area
Large collector junction area
F
emitter junction forward biased
collector junction reverse bias
Deadline
magnified state
saturated state
DC Biasing-BJTs
Current distribution
Voltage distribution
Kirchhoff's voltage law
Amplification principle
Fixed-Bias configuation
Base-emitter loop
Collector–emitter loop
Transistor Saturation
Load-Line Analysis
Emitter stabilization bias circuit
How: Adding a resistor to the emitter can improve the stability of the transistor
Base-emitter loop
Collector-emitter loop
voltage divider bias circuit
formula
Approximate Analysis
Voltage feedback DC bias
Base-emitter loop
Collector-emitter loop
BJT AC Analysis
Amplification of communication field
DC power supply function
transistor function
BJT Transistor Modeling
AC network
Remove DC power
Coupling capacitors and bypass capacitors can be replaced by short circuits
AC equivalent circuit
re transistor model
Common emitter fixed bias
judge
judge
judge
voltage divider bias
judge
judge
CE emitter bias
emitter follower
judge
Field-Effect Transistors
Junction field effect transistor (JFET)
structure
n-channel and p-channel
JFET transfer characteristics
Shockley's equation
transfer curve
important relationship
JFET
BJT
Insulated gate field effect transistor (MOSFET)
type
n channel
Enhanced
depletion type
P channel
Enhanced
depletion type
Characteristics (n-channel depletion type)
Characteristic curve
start up
Circuit diagram
depletion type
Enhanced
The main parameters
DC parameters
Turn on voltage VT (enhanced parameter)
Pinch-off voltage VP (depletion mode parameter)
Saturation leakage current IDSS (depletion mode parameter)
DC input resistance RGS
AC parameters
Output resistance rds
Low frequency mutual conductance gm
Limit parameters
analyze
For all FETs
For JFETs and depletion mode MOSFETs
Enhanced MOSFETs