MindMap Gallery Physics-Semiconductor Physics Mind Map
A mind map about physics-semiconductor physics, including free electrons, crystals, intrinsic semiconductors, etc. Hope it helps everyone.
Edited at 2023-11-21 23:29:50One Hundred Years of Solitude is the masterpiece of Gabriel Garcia Marquez. Reading this book begins with making sense of the characters' relationships, which are centered on the Buendía family and tells the story of the family's prosperity and decline, internal relationships and political struggles, self-mixing and rebirth over the course of a hundred years.
One Hundred Years of Solitude is the masterpiece of Gabriel Garcia Marquez. Reading this book begins with making sense of the characters' relationships, which are centered on the Buendía family and tells the story of the family's prosperity and decline, internal relationships and political struggles, self-mixing and rebirth over the course of a hundred years.
Project management is the process of applying specialized knowledge, skills, tools, and methods to project activities so that the project can achieve or exceed the set needs and expectations within the constraints of limited resources. This diagram provides a comprehensive overview of the 8 components of the project management process and can be used as a generic template for direct application.
One Hundred Years of Solitude is the masterpiece of Gabriel Garcia Marquez. Reading this book begins with making sense of the characters' relationships, which are centered on the Buendía family and tells the story of the family's prosperity and decline, internal relationships and political struggles, self-mixing and rebirth over the course of a hundred years.
One Hundred Years of Solitude is the masterpiece of Gabriel Garcia Marquez. Reading this book begins with making sense of the characters' relationships, which are centered on the Buendía family and tells the story of the family's prosperity and decline, internal relationships and political struggles, self-mixing and rebirth over the course of a hundred years.
Project management is the process of applying specialized knowledge, skills, tools, and methods to project activities so that the project can achieve or exceed the set needs and expectations within the constraints of limited resources. This diagram provides a comprehensive overview of the 8 components of the project management process and can be used as a generic template for direct application.
Semiconductor Physics
free electrons
k wave vector expression
crystal
Atomic density
cyclical
intrinsic semiconductor
extrinsic semiconductor
defect
Point defects: gaps Line defects: vacancies Plane defects: stacking faults and grain boundaries
wave-particle duality
small size
Volatility
Large size
particle nature
Schrödinger equation
Bloch's theorem
Brillouin zone
intrinsic semiconductor
concept
Bandgap width
Silicon Si=1.12eV Germanium Ge=0.67eV Gallium arsenide GaAs=1.43eV
most
High temperature and easy transition
effective mass
Electronic structure effective mass
state density effective mass
Conductivity effective mass
Features
Quasi kinetic energy
The electron hole concentration is equal
impurity semiconductor
Types of impurities
gap
substitute
n-type semiconductor
Donor energy level
release electrons
V family
p-type semiconductor
Acceptor energy level
bound electrons
Group III
energy level position
non-degenerate semiconductor
Shallow energy level
Donor ionization energy
Acceptor ionization energy
compensate
There are p and n types
deep energy level
multiple energy levels
long distance
compounding center
Recombine an electron-hole pair
trap effect
capture a carrier
Weakly degenerate semiconductor
Degenerate Semiconductor
The Fermi level is not in the forbidden band
carrier distribution
energy level concept
energy band level
state density
conductor bottom
price band top
electronic probability distribution function
Fermi distribution function
Fermi level
Boltzmann distribution function
Concentration (non-degenerate)
conduction band electron concentration
Effective density of states in the conduction band
Valence band hole concentration
Effective density of states in the valence band
concentration product
Impurity level
Donor energy level
electronic probability
Ground state degeneracy of donor energy level
Usually take 2
Donor energy level electron concentration
Ionized donor concentration
Acceptor energy level
hole probability
Ground state degeneracy of acceptor energy level
Usually take 4
Acceptor energy level hole concentration
Ionizing acceptor concentration
temperature
donor
Low temperature weak ionization zone
Strong ionization (saturation zone)
Unionized donor concentration
Transition zone
high temperature intrinsic zone
recipient
Low temperature weak ionization zone
Strong ionization (saturation zone)
Unionized acceptor concentration
Transition zone
high temperature intrinsic zone
conductivity
concept
Conductivity
Resistivity
n type
p type
Intrinsic
scattering
Ionized impurity scattering (i)
Impurity concentration
Lattice vibrational scattering
Acoustic wave scattering (s)
Optical wave scattering(o)
Phonon energy
Other scattering
formula relationship
散射概率
平均自由时间
载流子在电场中作漂移运动时,只有在连续两次散射之间的时间内才加速运动,这段时间称为自由时间
迁移率
mobility
non-equilibrium
minority carriers
concept
concentration
small injection
Non-equilibrium carriers are much smaller than the multi-carrier concentration
big injection
There are far more non-equilibrium carriers than the multi-carrier concentration
Non-equilibrium carrier concentration
Lifetime: the time for the non-equilibrium carrier concentration to reduce to 1/e
Quasi-Fermi level
Electronic quasi-Fermi level
Hole quasi-Fermi level
product
Correspondence between concentration and energy level
complex
form
emit photons
glow
emit phonons
lattice vibration
Auger compound
Increase carrier kinetic energy
process
internal
direct
direct net compounding rate
Strong n-type Strong p-type intrinsic
indirect
4 processes
Emit electrons and holes
Capture electrons and holes
parameter
Electron concentration of recombination center energy level
recombination center concentration
net compound rate
life
Capture cross section
surface
trap
electron accumulation concentration at trap energy level
Trap energy level
deep energy level
diffusion movement
universal solution
n type
thick enough
diffusion flow density
Must be thick (W)
Diffusion length
Current density
drift
Potential difference
diffusion
concentration difference
Einstein's relationship
Summarize
双极输运方程
小注入n型
小注入p型
simplify
稳定状态
过剩载流子均匀分布
零电场
无过剩载流子产生
无过剩载流子复合
pn junction
space charge region
Potential difference
Si0.7 Ge0.3
The forward bias becomes smaller and the reverse bias becomes larger
ideal pn junction
parameter
Unbalanced few children
Current density
One-way connectivity
Reverse saturation current
J increases with temperature
actual
Positive bias
a. Barrier recombination current
Recombination current density
b. Diffusion current
c. Large injection
d. Linear (series resistance effect)
reverse bias
Potential barrier produces current
generate current
breakdown
avalanche breakdown
multiplier effect
positive temperature coefficient
tunnel breakdown
Pass through forbidden zone
negative temperature coefficient
thermal breakdown
thermal instability
capacitance
Impurity distribution
barrier width
barrier capacitance
Diffusion capacitance
mutation knot
linear grade junction
tunnel effect
The forbidden bandwidth is too narrow
Extremely high frequency, extremely high temperature
negative resistance
MS
concept
work function
metal work function
metal barrier height
Semiconductor work function
semiconductor barrier height
Applied voltage
semiconductor barrier
metal barrier
unchanged
constant
Rectifier
touch
Rectifying contact
diffusion theory
thick barrier layer
Carrier movement = drift diffusion
Depletion layer width
Changes with voltage, not saturated
Thermionic emission theory
beyond barriers
Effective Richardson constant
Independent of voltage, function of temperature
Mirror power
Metal induced positive charge
barrier maximum position
Barrier reduction
tunnel effect
penetration barrier
Barrier reduction
critical barrier thickness
Schottky diodes
high frequency
Large reverse saturation current
Lower forward conduction voltage—0.3V
Ohmic contact
thin barrier
Penetrate barrier
Metals - Heavily doped semiconductors - Doped semiconductors
surface state
MIS
parameter
ideal conditions
p type
state
surface energy band
Voltage
Electric field strength at the surface
surface charge density
capacitance per unit area
multi-child accumulation
flat belt
Exhaustion of many sons
Antitype
weak antitype
strong antitype
actual
The difference in work functions between metals and semiconductors is zero
flatband voltage
There is no charge within the insulating layer and the insulating layer is completely non-conductive
There is no interface state at the interface between insulator and semiconductor
C-V characteristics
Pass low impedance high frequency
n type
Chen Peiming
pn junction
tunnel effect
The forbidden bandwidth is too narrow
Extremely high frequency, extremely high temperature
negative resistance
capacitance
Impurity distribution
barrier width
capacitance
Diffusion capacitance
mutation knot
linear grade junction
ideal pn junction
Unbalanced few children
Current density
One-way connectivity
Reverse saturation current
J increases with temperature
Positive bias
a. Barrier recombination current
Recombination current density
b. Diffusion current
c. Large injection
d. Linear
reverse bias
Potential barrier produces current
generate current
breakdown
avalanche breakdown
multiplier effect
positive temperature coefficient
tunnel breakdown
Pass through forbidden zone
negative temperature coefficient
thermal breakdown
thermal instability
space charge region
Potential difference
Si0.7 Ge0.3
The forward bias becomes smaller and the reverse bias becomes larger
Energy band and carrier distribution at thermal equilibrium
basic
single electron approximation
per cubic centimeter
Silicon 5*10E22
Germanium 2.42*10E22
The effective number of atoms in a diamond unit cell is 8
free electrons
k wave vector expression
Bandgap width
Diamond 6~7eV, silicon 1.12eV, germanium 0.67eV, gallium arsenide 1.43eV
High temperature becomes smaller
effective mass
Valence band is negative
Quasi kinetic energy
hole
impurity semiconductor
Impurities
gap
substitute
n-type semiconductor
Donor energy level
release electrons
V family
p-type semiconductor
Acceptor energy level
bound electrons
Group III
energy level
non-degenerate semiconductor
Shallow energy level
Donor ionization energy
Acceptor ionization energy
compensate
There are p and n types
deep energy level
multiple energy levels
long distance
compounding center
Recombine an electron-hole pair
trap effect
capture a carrier
Weakly degenerate semiconductor
Degenerate Semiconductor
The Fermi level is not in the forbidden band
carrier distribution
energy band level
state density
conductor bottom
price band top
electronic probability distribution function
Fermi distribution function
Fermi level
Boltzmann distribution function
Concentration (non-degenerate)
conduction band electron concentration
Effective density of states in the conduction band
Valence band hole concentration
Effective density of states in the valence band
concentration product
intrinsic concentration
Impurity level
Donor energy level
electronic probability
Ground state degeneracy of donor energy level
Usually take 2
Donor energy level electron concentration
Ionized donor concentration
Acceptor energy level
hole probability
Ground state degeneracy of acceptor energy level
Usually take 4
Acceptor energy level hole concentration
Ionizing acceptor concentration
temperature
donor
Low temperature weak ionization zone
Strong ionization (saturation zone)
Unionized donor concentration
Transition zone
high temperature intrinsic zone
recipient
Low temperature weak ionization zone
Strong ionization (saturation zone)
Unionized acceptor concentration
Transition zone
high temperature intrinsic zone
carrier transport phenomenon
conductivity
Conductivity
Resistivity
n type
p type
Intrinsic
scattering
Ionized impurity scattering (i)
Impurity concentration
Lattice vibrational scattering
Acoustic wave scattering (s)
Optical wave scattering(o)
Phonon energy
Other scattering
formula relationship
散射概率
平均自由时间
载流子在电场中作漂移运动时,只有在连续两次散射之间的时间内才加速运动,这段时间称为自由时间
迁移率
mobility
non-equilibrium
minority carriers
concentration
small injection
Non-equilibrium carriers are much smaller than the multi-carrier concentration
big injection
There are far more non-equilibrium carriers than the multi-carrier concentration
Non-equilibrium carrier concentration
Lifetime: the time for the non-equilibrium carrier concentration to reduce to 1/e
Quasi-Fermi level
Electronic quasi-Fermi level
Hole quasi-Fermi level
product
Correspondence between concentration and energy level
complex
form
emit photons
glow
emit phonons
lattice vibration
Auger compound
Increase carrier kinetic energy
process
internal
direct
direct net compounding rate
Strong n-type Strong p-type intrinsic
indirect
4 processes
Emit electrons and holes
Capture electrons and holes
parameter
Electron concentration of recombination center energy level
recombination center concentration
net compound rate
life
Capture cross section
surface
trap
electron accumulation concentration at trap energy level
Trap energy level
deep energy level
diffusion movement
universal solution
n type
thick enough
diffusion flow density
Must be thick (W)
Diffusion length
Current density
drift
Potential difference
diffusion
concentration difference
Einstein's relationship
bipolar transport equation
Small injection n-type
Small injection p-type
simplify
稳定状态
过剩载流子均匀分布
零电场
无过剩载流子产生
无过剩载流子复合